Spatial and temporal luminescence dynamics in an InxGa1-xN single quantum well probed by near-field optical microscopy

被引：78

作者：

Kaneta, A ^{[1
]}

Okamoto, K

Kawakami, Y

Fujita, S

Marutsuki, G

Narukawa, Y

Mukai, T

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

[2] Nichia Corp, Tokushima 7748601, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 23期

关键词：

D O I：

10.1063/1.1526917

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spatial distribution of photoluminescence (PL) with spectral, spatial, and/or time resolution has been assessed in an InxGa1-xN single-quantum-well (SQW) structure using scanning near-field optical microscope (SNOM) under illumination-collection mode at 18 K. The near-field PL images revealed the variation of both intensity and peak energy in PL spectra according to the probing location with the scale less than a few hundredths of a nanometer. PL linewidth, the value of which was about 60 meV in macroscopic PL, was as small as 11.6 meV if the aperture size was reduced to 30 nm. Clear spatial correlation was observed between PL intensity and peak wavelength, where the regions of strong PL intensity correspond to those of long wavelength. Time-resolved SNOM-PL study showed the critical evidence that supports the model of diffusion of carriers to potential minima. (C) 2002 American Institute of Physics.

引用

页码：4353 / 4355

页数：3

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