Spatial inhomogeneity of photoluminescence in an InGaN-based light-emitting diode structure probed by near-field optical microscopy under illumination-collection mode

被引：25

作者：

Kaneta, A ^{[1
]}

Izumi, T

Okamoto, K

Kawakami, Y

Fujita, S

Narita, Y

Inoue, T

Mukai, T

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

[2] Jasco Corp, Spectroscop Div, Hachioji, Tokyo 1928537, Japan

[3] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 7748601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2001年 / 40卷 / 01期

关键词：

InGaN; SNOM; illumination-collection mode; PL mapping image; spatial inhomogeneity;

D O I：

10.1143/JJAP.40.110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spatial distribution of photoluminescence (PL) spectra has been assessed in an InCaN single quantum well (SQW)-based light-emitting diode structure by near-held optical microscopy under the illumination-collection mode. The obtained FL mapping image revealed a variation in both peak and intensity of PL spectra according to the probing location with a scale less than about 200 nm. The variation in PL intensity is from 0.8 to 1.8 in arbitrary units indicating that the internal quantum efficiency fluctuates from 10% to 50% within the active layer.

引用

页码：110 / 111

页数：2

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