Enhanced emission in organic light-emitting diodes using Ta2O5 buffer layers

被引：45

作者：

Lu, HT ^{[1
]}

Yokoyama, M ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 08期

关键词：

organic light emitting diodes; buffer layer; hole transport layer;

D O I：

10.1016/S0038-1101(03)00050-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ultra-thin hole-injection buffer layer using Ta2O5 by RF magnetron sputtering in organic light-emitting diodes has been fabricated. With the property of high dielectric constant, Ta2O5 can be expected to be a good buffer layer material and thus enhance the emission performance of the OLED. The Ta2O5 film blocks part of the injected holes from the ITO anode to the organic layer (TPD) and improves the balance of hole and electron injections. The power efficiency of the device with the Ta2O5 film can be increased by approximately 20%. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：1409 / 1412

页数：4

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