Extremely low-threshold amplified spontaneous emission of 9,9′-spirobifluorene derivatives and electroluminescence from field-effect transistor structure

被引：129

作者：

Nakanotani, Hajime

Akiyama, Seiji

Ohnishi, Dai

Moriwake, Masato

Yahiro, Masayuki

Yoshihara, Toshitada

Tobita, Seiji

Adachi, Chihaya

机构：

[1] Kyushu Univ, Ctr Future Chem, Fukuoka 8190395, Japan

[2] Japan Sci & Technol Agcy JST, CREST Program, Shibuya Ku, Tokyo 1500011, Japan

[3] Sci & Technol Res Inc, Mitsubishi Chem Grp, Div Res & Dev, Funct Mat Lab, Yokohama, Kanagawa 2278502, Japan

[4] Rohm Co, Res & Dev Headquarters, Kyoto 6158585, Japan

[5] Gunma Univ, Dept Chem, Gunma 3768515, Japan

来源：

ADVANCED FUNCTIONAL MATERIALS | 2007年 / 17卷 / 14期

关键词：

D O I：

10.1002/adfm.200700069

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

By doping 2,7-bis[4-(N-carbazole)phenylvinyl]-9,9'-spirobifluorene (spiro-SBCz) into a wide energy gap 4,4'-bis(9-carbazole)-2,2'-biphenyl (CBP) host, we demonstrate an extremely low ASE threshold of E-th = (0.11 +/- 0.05) mu J cm(-2) (220 W cm(-2)) which is the lowest ASE threshold ever reported. In addition, we confirmed that the spiro-SBCz thin film functions as an active light emitting layer in organic light-emitting diode (OLED) and a field-effect transistor (FET). In particular, we succeeded to obtain linear electroluminescence in the FET structure which will be useful for future organic laser diodes.

引用

页码：2328 / 2335

页数：8

共 29 条

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