Light emission from a polymer transistor

被引：92

作者：

Ahles, M ^{[1
]}

Hepp, A ^{[1
]}

Schmechel, R ^{[1
]}

von Seggern, H ^{[1
]}

机构：

[1] TH Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 03期

关键词：

D O I：

10.1063/1.1640800

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on light emission from a polymeric transistor that utilizes interdigitated source and drain electrodes with channel length of 5 mum in a bottom gate configuration based on a Si/SiO2 substrate. The polymer investigated is poly[9,9-di(ethylhexyl)fluorene] deposited by spin coating from chloroform solution to achieve an active layer thickness of 40 nm. Light emission occurs above drain source voltages of -60 V and the light intensity can be controlled by the gate voltage. Emission occurs close to the drain electrode as determined by optical microscopy. The transistor operates in hole accumulation mode without saturation of the output characteristics. (C) 2004 American Institute of Physics.

引用

页码：428 / 430

页数：3

共 18 条

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