Concepts of light emission from a silicon MOS tunnel emitter Auger transistor

被引：3

作者：

Grekhov, IV

Shulekin, AF

Vexler, MI

Zimmermann, H

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Univ Kiel, Lehrstuhl Halbleitertech, D-24143 Kiel, Germany

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 02期

关键词：

D O I：

10.1016/S0038-1101(98)00276-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An interesting case of light emission from a silicon-based device, visible electroluminescence from an Auger phototransistor with a MOS tunnel emitter, has been analysed theoretically. A simple model of this luminescence is developed. The light originating from a tunnel MOS structure is shown to be a superposition of radiation produced by injected hot electrons (HE-radiation) and radiation from the space charge region (SCR-radiation). The shape of the spectrum and the total intensity can be changed by varying the collector voltage and insulator bias. The spectrum of HE-radiation has an apparent high-energy border, whose position depends primarily on the insulator voltage. A substantial contribution to the insulator voltage is provided by holes generated by Auger ionization. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：417 / 426

页数：10

共 22 条

[1] ANDO T, 1982, REV MOD PHYS, V54, pCH3
[2] Direct extraction of the electron tunneling effective mass in ultrathin SiO2
Brar, B
Wilk, GD
Seabaugh, AC
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (18) : 2728 - 2730
[3] HOT-CARRIER LUMINESCENCE IN SI
BUDE, J
SANO, N
YOSHII, A
[J]. PHYSICAL REVIEW B, 1992, 45 (11): : 5848 - 5856
[4] Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions
Cartier, E
Tsang, JC
Fischetti, MV
Buchanan, DA
[J]. MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 103 - 106
[5] DEBAY G, 1994, J SEMICOND SCI TECHN, V9, P1017
[6] WEAR-OUT OF ULTRA-THIN GATE OXIDES DURING HIGH-FIELD ELECTRON-TUNNELING
DEPAS, M
VERMEIRE, B
MARTENS, PW
MEURIS, M
HEYNS, MM
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (06) : 753 - 758
[7] EBELING KJ, 1992, INTEGRIERTE OPTOELEK, pCH8
[8] EDWARDS DF, 1985, HDB OPTICAL CONSTANT, P547, DOI DOI 10.1016/B978-0-08-054721-3.50029-0
[9] TUNNEL ELECTRON INDUCED CHARGE GENERATION IN VERY THIN SILICON-OXIDE DIELECTRICS
FARMER, KR
ANDERSSON, MO
ENGSTROM, O
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (23) : 2666 - 2668
[10] MONTE-CARLO SIMULATION OF TRANSPORT IN TECHNOLOGICALLY SIGNIFICANT SEMICONDUCTORS OF THE DIAMOND AND ZINCBLENDE STRUCTURES .1. HOMOGENEOUS TRANSPORT
FISCHETTI, MV
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) : 634 - 649

← 1 2 3 →