High-sensitivity mid-ultraviolet Pt/Mg0.59Zn0.41O schottky photodiode on a ZnO single crystal substrate

被引：38

作者：

Endo, Haruyuki ^{[1
,2
]}

Kikuchi, Michiko ^{[1
]}

Ashioi, Masahumi ^{[1
]}

Kashiwaba, Yasuhiro ^{[3
]}

Hane, Kazuhiro ^{[2
]}

Kashiwaba, Yasube ^{[4
]}

机构：

[1] Iwate Ind Res Inst, Elect & Mech Div, Morioka, Iwate 0200852, Japan

[2] Tohoku Univ, Dept Nanomech, Sendai, Miyagi 9808579, Japan

[3] Sendai Natl Coll Technol, Dept Elect Engn, Sendai, Miyagi 9893128, Japan

[4] Iwate Univ, Ctr Reg Collaborat Res & Educ, Morioka, Iwate 0208551, Japan

来源：

APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 05期

关键词：

D O I：

10.1143/APEX.1.051201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Pt/Mg0.59Zn0.41O Schottky photodiode on a ZnO single crystal is reported. The Mg0.59Zn0.41O film was deposited on a ZnO single crystal substrate by an RF magnetron sputtering method. The optical bandgap of the Mg0.59Zn0.41O film obtained from the spectral transmittance and reflectance, was 4.6eV. The fabricated photodiode consisted of an anti-reflection SiO2 film, semitransparent Schottky Pt electrode, Mg0.59Zn0.41O film, n(+)-ZnO single crystal substrate and Pt/Ti ohmic electrode. The ideality factor of the photodiode, obtained from the current-voltage characteristics, was 1.3. The maximum responsivity was 0.015A/W at the wavelength of 220nm. (c) 2008 The Japan Society of Applied Physics.

引用

页码：0512011 / 0512013

页数：3

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