Real time spectroscopic ellipsometry studies of the solid phase crystallization of amorphous silicon

被引：3

作者：

Fujiwara, H ^{[1
]}

Koh, J ^{[1
]}

Lee, Y ^{[1
]}

Wronski, CR ^{[1
]}

Collins, RW ^{[1
]}

机构：

[1] Penn State Univ, Ctr Thin Film Devices, University Pk, PA 16802 USA

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998 | 1998年 / 507卷

关键词：

D O I：

10.1557/PROC-507-939

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have introduced real time spectroscopic ellipsometry (RTSE) for characterization of the solid phase crystallization (SPC) of intrinsic and n-type amorphous silicon (a-Si:H) thin films. RTSE has several advantages in the study and design of SPC processes for thin film transistor and solar cell fabrication. These include the capability of obtaining (i) calibration data that yield the near surface temperature of the film during processing, (ii) the volume fraction of the crystalline Si component of the film continuously versus time during SPC, and (iii) a measurement of the grain size and quality of the final polycrystalline Si film. For the thin layers studied here (similar to 150-1000 Angstrom), we demonstrate excellent fitting of the SPC dynamics to the Avrami-Johnson-Mehl theory for random nucleation and two-dimensional crystallite growth. For a-Si:H n-layers, the crystallization time over the range from 565 to 645 degrees C appears to be weakly activated with an energy of 0.6 eV.

引用

页码：939 / 944

页数：6

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