Measurement of fast surface photovoltage relaxation

被引:5
作者
Hlavka, J
Svehla, R
机构
[1] Department of Solid State Physics, Masaryk University, 611 37 Brno
关键词
D O I
10.1063/1.1147218
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A new version of the measuring circuit is presented which makes it possible to measure fast surface photovoltage relaxation in a simple way. An explanation of the experimental arrangement is given as well as illustrating the results. (C) 1996 American Institute of Physics.
引用
收藏
页码:2588 / 2589
页数:2
相关论文
共 9 条
[1]   DETERMINATION OF SURFACE-STATE PARAMETERS FROM SURFACE PHOTOVOLTAGE TRANSIENTS [J].
BALESTRA, CL ;
LAGOWSKI, J ;
GATOS, HC .
SURFACE SCIENCE, 1977, 64 (02) :457-464
[3]   LARGE-SIGNAL SURFACE PHOTOVOLTAGE STUDIES WITH GERMANIUM [J].
JOHNSON, EO .
PHYSICAL REVIEW, 1958, 111 (01) :153-166
[4]   MEASUREMENT OF MINORITY CARRIER LIFETIMES WITH THE SURFACE PHOTOVOLTAGE [J].
JOHNSON, EO .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (11) :1349-1353
[5]   LASER-SURFACE PHOTOVOLTAGE SPECTROSCOPY - A NEW TOOL FOR THE DETERMINATION OF SURFACE-STATE DISTRIBUTIONS [J].
KRONIK, L ;
BURSTEIN, L ;
SHAPIRA, Y ;
ORON, M .
APPLIED PHYSICS LETTERS, 1993, 63 (01) :60-62
[6]   NEW APPROACH TO QUANTITATIVE SURFACE PHOTOVOLTAGE SPECTROSCOPY ANALYSIS [J].
KRONIK, L ;
SHAPIRA, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (06) :3081-3084
[7]   DETERMINATION OF SURFACE STATE PARAMETERS FROM SURFACE PHOTOVOLTAGE TRANSIENTS - CDS [J].
LAGOWSKI, J ;
BALESTRA, CL ;
GATOS, HC .
SURFACE SCIENCE, 1972, 29 (01) :203-&
[8]  
ROSS B, 1980, ASTM STP AM SOC TEST, V712, P14
[9]   A FAST, PREPARATION-FREE METHOD TO DETECT IRON IN SILICON [J].
ZOTH, G ;
BERGHOLZ, W .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) :6764-6771