Two-dimensional charge carrier mobility studies of regioregular P3HT

被引：21

作者：

Aleshin, AN ^{[1
]}

Sandberg, H

Stubb, H

机构：

[1] Abo Akad, Dept Phys, Turku, Finland

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

来源：

SYNTHETIC METALS | 2001年 / 121卷 / 1-3期

关键词：

polythiophene and derivatives; field-effect transistors; solution processing; conductivity;

D O I：

10.1016/S0379-6779(00)01259-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Charge carrier mobility of regioregular poly(3-hexylthiophene) (RR-P3HT) is studied within the temperature range 77 - 370 K using thin film field-effect transistors (FETs). The non-monotonic thickness dependence of the room temperature field-effect mobility (CL) has a maximum at similar to 10 nm. The film thickness was varied both by changing the concentration of the solution of RR-P3HT in chloroform and by varying the spin coating speed. For films about 5-10 nm thick the maximum mobility is mu similar to 10(-3) cm(2)V(-1)s(-1) and the maximum on-off ratio is > 10(5). At low T, mu (T) = mu (0) exp[-(T-0/T)(0.33)]. The results support Mott's variable-range hopping model for two-dimensional systems.

引用

页码：1449 / 1450

页数：2

共 10 条

[1] Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility [J].