Waveguide study and refractive indices of GaN:Mg epitaxial film

被引:19
作者
Zhang, HY [1 ]
He, XH [1 ]
Shih, YH [1 ]
Schurman, M [1 ]
Feng, ZC [1 ]
Stall, RA [1 ]
机构
[1] EMCORE CORP,SOMERSET,NJ 08873
关键词
D O I
10.1364/OL.21.001529
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Waveguide TE and TM modes in a GaN:Mg epitaxial crystalline film were studied in a wide spectral range (457.9-1053 nm). The refractive indices n(e) and n(o) were accurately determined by TM and TE mode measurements at six different wavelengths (457.9, 514.5, 632.8, 724.3, 855.1, and 1053 nm). Dispersive curves of n(e) versus lambda and n(o) versus lambda were obtained. It was found that bireferingence slightly increases (n(e) - n(o) = 0.933-0.038) from 1053 to 457.9 nm. (C) 1996 Optical Society of America
引用
收藏
页码:1529 / 1531
页数:3
相关论文
共 10 条
[1]   REFRACTIVE INDEX OF GAN [J].
EJDER, E .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 6 (02) :445-&
[2]   REFRACTIVE-INDEXES OF WURTZITE AND ZINCBLENDE GAN [J].
LIN, ME ;
SVERDLOV, BN ;
STRITE, S ;
MORKOC, H ;
DRAKIN, AE .
ELECTRONICS LETTERS, 1993, 29 (20) :1759-1761
[3]  
MALITSON IH, 1992, 1992 ANN M OPT SOC A
[4]  
STRITE J, 1992, J VAC SCI TECHNOL B, V10, P237
[5]  
STRITE J, 1993, THIN SOLID FILMS, V213, P197
[6]   MODES OF PROPAGATING LIGHT WAVES IN THIN DEPOSITED SEMICONDUCTOR FILMS [J].
TIEN, PK ;
ULRICH, R ;
MARTIN, RJ .
APPLIED PHYSICS LETTERS, 1969, 14 (09) :291-&
[7]   MEASUREMENT OF THIN-FILM PARAMETERS WITH A PRISM COUPLER [J].
ULRICH, R ;
TORGE, R .
APPLIED OPTICS, 1973, 12 (12) :2901-2908
[8]  
ULRICH R, 1970, J OPT SOC AM, V60, P1325
[9]   INVESTIGATION OF N-TYPE AND P-TYPE DOPING OF GAN DURING EPITAXIAL-GROWTH IN A MASS-PRODUCTION SCALE MULTIWAFER-ROTATING-DISK REACTOR [J].
YUAN, C ;
SALAGAJ, T ;
GURARY, A ;
THOMPSON, AG ;
KROLL, W ;
STALL, RA ;
HWANG, CY ;
SCHURMAN, M ;
LI, Y ;
MAYO, WE ;
LU, Y ;
KRISHNANKUTTY, S ;
SHMAGIN, IK ;
KOLBAS, RM ;
PEARTON, SJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (05) :2075-2080
[10]   HIGH-QUALITY P-TYPE GAN DEPOSITION ON C-SAPPHIRE SUBSTRATES IN A MULTIWAFER ROTATING-DISK REACTOR [J].
YUAN, C ;
SALAGAJ, T ;
GURARY, A ;
ZAWADZKI, P ;
CHERN, CS ;
KROLL, W ;
STALL, RA ;
LI, Y ;
SCHURMAN, M ;
HWANG, CY ;
MAYO, WE ;
LU, Y ;
PEARTON, SJ ;
KRISHNANKUTTY, S ;
KOLBAS, RM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (09) :L163-L165