INVESTIGATION OF N-TYPE AND P-TYPE DOPING OF GAN DURING EPITAXIAL-GROWTH IN A MASS-PRODUCTION SCALE MULTIWAFER-ROTATING-DISK REACTOR

n- and p-doped GaN thin films have been epitaxially grown on c-sapphire substrates by metal-organic chemical-vapor deposition in a production scale multiwafer-rotating-disk reactor. The in situ doping was performed with material having a low background carrier concentration of n similar to mid-10(16) cm(-3). Biscyclopentadienyl magnesium (Cp(2)Mg) and disilane (Si2H6) were used as the precursors for the p and n dopants, Mg and Si, respectively. The effect of mole flow on material, electrical, and optical properties was studied. We observed that both n- and p-type doped GaN exhibited an excellent surface morphology, even with a high mole flow of doping precursors. After the Mg-doped GaN was annealed in a N-2 ambient at similar to 700 degrees C for 30-60 min, the highly resistive GaN was converted into p-type GaN with a low resistance of 0.1-1.0 Omega cm. Transmission electron microscopy showed that the defect density on the annealed Mg-doped GaN is only 4X10(9) cm(-2) which is of the same order as undoped GaN (1.5X10(9) cm(-2)). One of the best p-GaN samples has a Hall carrier concentration of 5.2X10(18) cm(-3) and a hole mobility of 20 cm(2)/V s, which are the best values reported in the literature to date. The photoluminescence spectra of p-GaN show a strong band edge at 430 nm with a full width at half-maximum of 300 meV at room temperature. (C) 1995 American Vacuum Society.