Raman scattering in single-variant spontaneously ordered GaInP2

Raman scattering is used to study the phenomenon of spontaneous long-range ordering in GaInP2 epilayers. The measurements are performed in a series of single-variant ordered samples with different order parameter values. The samples have been grown by metalorganic vapor phase epitaxy on GaAs (001) substrates misoriented 6 degrees off towards the [111]B direction, and the ordering degree has been varied by changing the growth temperature. The Raman selection rules of the ordered phase are derived, using group theory. Polarized Raman scattering measurements allow the identification of modes associated with the trigonal atomic arrangement.