OPTICAL BAND-GAP IN ORDERED GA0.5IN0.5P

被引:2
作者
ALSINA, F
PASCUAL, J
MASSONE, E
CAMASSEL, J
ANDRE, JP
机构
[1] UNIV MONTPELLIER 2,ETUD SEMICOND GRP,F-34095 MONTPELLIER 5,FRANCE
[2] LAB ELECTR & PHYS APPL,F-94451 LIMEIL BREVANNES,FRANCE
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷
关键词
ORDERED GAINP; REFLECTIVITY; PHOTOLUMINESCENCE; TRIGONAL SELECTION RULES;
D O I
10.7567/JJAPS.32S3.720
中图分类号
O59 [应用物理学];
学科分类号
摘要
Symmetry breaking effects on the top-most of the valence band in long-range ordered Ga0.5In0.5P have been investigated by means of reflectivity and photoluminescence spectroscopy. The results are consistent with a band scheme where the trigonal crystal field splits the valence band in a high energy level of GAMMA6v, symmetry and a low energy level of GAMMA4v + GAMMA5v, symmetry. The corresponding optical transitions, GAMMA6v --> GAMMA6c and (GAMMA4 + GAMMA5)v --> GAMMA6c, are fairly well described in terms of trigonal selection rules.
引用
收藏
页码:720 / 721
页数:2
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