BAND-GAP NARROWING IN ORDERED AND DISORDERED SEMICONDUCTOR ALLOYS

被引:227
作者
WEI, SH
ZUNGER, A
机构
[1] Solar Energy Research Institute, Golden
关键词
D O I
10.1063/1.103307
中图分类号
O59 [应用物理学];
学科分类号
摘要
Either spontaneous or artificial ordering of semiconductor alloys into CuAu-like, chalcopyrite, or CuPt-like structures is predicted to be accompanied by a reduction in the direct band gaps relative to the average over the binaries. In this letter calculated results are presented for seven III-V and II-VI alloys. We identify the mechanism for this band-gap narrowing as band folding followed by repulsion between the folded states. The latter is coupled by the non-zinc-blende component of the superlattice potential. The same physical mechanism (but to a different extent) is responsible for gap bowing in disordered alloys.
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页码:662 / 664
页数:3
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