Hall effect measurements on CdTe layers electrodeposited from acidic aqueous electrolyte

被引:51
作者
Miyake, M [1 ]
Murase, K [1 ]
Hirato, T [1 ]
Awakura, Y [1 ]
机构
[1] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
基金
日本学术振兴会;
关键词
hall effect; resistivity; thin layer; cadmium telluride; solar cells;
D O I
10.1016/j.jelechem.2003.09.008
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The electrical properties of CdTe layers electrodeposited from an acidic sulfate aqueous electrolyte were examined by resistivity and Hall effect measurements. It was revealed that the resistivity, conduction type, and carrier density of the as-deposited CdTe layers could be controlled by the deposition potential. The resistivity varied in the range from 2 x 10(6) to 2 x 10(8) Omega cm. The CdTe layers deposited at potentials slightly positive to the Cd(2+)/Cd equilibrium potential (-0.37 V vs. SHE less than or equal to E less than or equal to - 0.30 V) had n-type conductions, while those deposited at more positive potentials (-0.15 V less than or equal to E less than or equal to - 0.05 V) were p-type. The carrier densities of the CdTe layers were on the order of 10(10)-10(11) cm(-3). As the deposition potential became more positive, the electron density decreased, and conversely, the hole density increased. The electron mobilities for the n-type CdTe layers were in the range 7-40 cm(2) v(-1) s(-1), while the hole mobility was about 1 cm(2) v(-1) s(-1). (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:247 / 253
页数:7
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