Measurement of the tunnel rate in SIS' tunnel junctions as function of bias voltage

被引：12

作者：

Kraus, H

Gutsche, M

Hettl, P

Jochum, J

Kemmather, B

机构：

[1] SIEMENS COMPONENTS INC,DRAM DEV PROGRAM,HOPEWELL JCT,NY 12533

[2] TECH UNIV MUNICH,DEPT PHYS E15,D-85748 GARCHING,GERMANY

[3] UNIV CALIF BERKELEY,BERKELEY,CA 94720

[4] CEA,SPEC,CTR ETUD SACLAY,F-91191 GIF SUR YVETTE,FRANCE

来源：

JOURNAL OF SUPERCONDUCTIVITY | 1996年 / 9卷 / 02期

关键词：

SIS' junctions; tunnel rate; detectors;

D O I：

10.1007/BF00728310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cryogenic detectors with superconducting tunnel junctions can provide an energy resolution improved by at least one order of magnitude compared with standard semiconductor detectors. While the detection principle was already demonstrated many years ago, the past years were dedicated to the transition from the laboratory sample to practical detectors. Our most favored detector design gives rise to tunnel junctions with electrodes of unequal energy gaps. In such hetero tunnel junctions bias conditions can be established which cause a negative signal current. We report the experimental verification of this effect, and we discuss the yield of charge signal of cryogenic detectors based upon superconducting tunnel junctions.

引用

收藏

页码：245 / 252

页数：8

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