GROWTH AND CHARACTERIZATION OF EPITAXIAL VANADIUM FILMS

被引：13

作者：

GUTSCHE, M

KRAUS, H

JOCHUM, J

KEMMATHER, B

GUTEKUNST, G

机构：

[1] MAX PLANCK INST MET RES, INST WERKSTOFFWISSENSCH, D-70174 STUTTGART, GERMANY

[2] PENN STATE UNIV, DEPT ASTRON & ASTROPHYS, UNIVERSITY PK, PA 16802 USA

来源：

THIN SOLID FILMS | 1994年 / 248卷 / 01期

关键词：

D O I：

10.1016/0040-6090(94)90204-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-purity epitaxial vanadium (001) films have been grown on magnesium oxide (001) and sapphire (1012BAR) at different substrate temperatures. X-ray diffraction, channeling, and high resolution transmission electron microscopy data prove the high structural perfection of these films. The residual resistance ratio (RRR) was measured to investigate the electrical transport properties of the vanadium layers. The experimental results for RRR depended on fabrication parameters and choice of substrate. A maximum value of RRR = 159 was obtained for vanadium on MgO. In addition, the superconducting transition temperature of the vanadium films was observed to depend systematically on layer thickness and residual resistance ratio.

引用

页码：18 / 27

页数：10

共 43 条

[1] SUPERCONDUCTING PROPERTIES OF VANADIUM FILMS [J].