Optical switching in VO2 thin films

Vanadium dioxide thin films have been deposited from vanadium alkoxides VO(OR)(3). An amorphous film is formed that transforms into crystalline VO2 upon heating at 500 degrees C under a reducing atmosphere. Optically transparent VO2 thin films are then obtained that exhibit both electrical and optical switching around 70 degrees C. The switching temperature together with the shape of the hysteresis loop can be modified by doping VO2 films with foreign cations. Doped MxVO2 (M = W6+, Nb5+, Ti4+, Cr3+ or Al3+) thin films have been prepared under the same conditions by mixing the vanadium alkoxide and a metal salt in an alcoholic solution. The switching temperature decreases when the film is doped with high-valent cations (W6+) and increases with low-valent cations (Al3+, Cr3+). The transition temperature first decreases and then increases when Ti-IV is added to the VO2 film while the width of the hysteresis loop is significantly reduced.