Strain-balanced In0.62Ga0.38As/In0.47Ga0.53As (InP) quantum well cell for thermophotovoltaics

被引：6

作者：

Rohr, C ^{[1
]}

Connolly, JP ^{[1
]}

Barnham, KWJ ^{[1
]}

Mazzer, M ^{[1
]}

Button, CC ^{[1
]}

Clark, J ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Expt Solid State Phys, London SW7 2BZ, England

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.916112

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

For thermophotovoltaic (TPV) applications, there is considerable interest at present in extending the absorption to longer wavelengths for higher overall system efficiencies with lower temperature sources. With strain-balanced In1-xGaxAs/In1-yGayAs (InP) Quantum Well Cells (QWCs)the absorption can be extended, while retaining a low dark current. We present a strain-balanced In0.62Ga0.38As/In0.47Ga0.53As QWC, which extends the absorption edge beyond that of lattice-matched bulk InGaAs to about 1.8 mum, which is similar to that of GaSb, while the dark current remains at a lower level. We can model the spectral response of InP-based-including strain-balanced-QWCs. Efficiencies for solar (AM1.5G), black-body spectra of 1500-3200 K and selective emitters are presented. Lattice-matched InGaAsP and strain-balanced InGaAs (InP) QWCs show superior performance when compared with bulk InGaAs monolithic interconnected modules and bulk GaSb TPV cells.

引用

页码：1234 / 1237

页数：4

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