Pd(II)-catalyzed addition polymerization and ring opening metathesis polymerization of alicyclic monomers: routes to new matrix resins for 193 nm photolithography

A series of alicyclic polymers designed for 193 nm photoresist applications have been synthesized and characterized. These polymers were synthesized by Pd(II)-catalyzed addition and ring opening metathesis polymerization techniques. Methods for removing residual metal complexes of Pd(II) and Ir(IV) from alicyclic polymers were developed. The low absorbance of these polymers at 193 nm and their high dry etch resistance make them attractive candidates for 193 nm lithography. When formulated with onium-type photoacid generators and plasticizers in propylene glycol monomethyl ether acetate, these photoresists have demonstrated high resolution and high sensitivity. (C) 1998 Elsevier Science B.V. All rights reserved.