High-performance organic transistors using solution-processed nanoparticle-filled high-κ polymer gate insulators

被引：175

作者：

Schroeder, R ^{[1
]}

Majewski, LA ^{[1
]}

Grell, M ^{[1
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 12期

关键词：

D O I：

10.1002/adma.200401398

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A polymer matrix filled with nanoparticles, used as the gate material, makes solution-processable, low-voltage, organic transistors possible. The device shown here operates at very low voltages (see Figure). Atomic force microscopy shows a relatively homogeneous film, even with a high filling of nanoparticles.

引用

页码：1535 / 1539

页数：5

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