Nanoscale rectification at the LaAlO3/SrTiO3 interface

被引：24

作者：

Bogorin, Daniela F. ^{[1
]}

Bark, Chung Wung ^{[2
]}

Jang, Ho Won ^{[2
]}

Cen, Cheng ^{[1
]}

Folkman, Chad M. ^{[2
]}

Eom, Chang-Beom ^{[2
]}

Levy, Jeremy ^{[1
]}

机构：

[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

[2] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 01期

基金：

美国国家科学基金会;

关键词：

lanthanum compounds; metal-insulator transition; nanowires; rectification; strontium compounds; OXIDES; CARRIERS;

D O I：

10.1063/1.3459138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Control over electron transport at scales that are comparable to the Fermi wavelength or mean-free path can lead to a variety of electronic devices. Here we report electrical rectification in nanowires formed by nanoscale control of the metal-insulator transition at the interface between LaAlO3 and SrTiO3. Controlled in-plane asymmetry in the confinement potential produces electrical rectification in the nanowire, analogous to what occurs naturally for Schottky diodes or by design in structures with engineered structural inversion asymmetry. Nanostructures produced in this manner may be useful in developing a variety of nanoelectronic, electro-optic, and spintronic devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3459138]

引用

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