Nonequilibrium carriers in GaAs grown by low-temperature molecular beam epitaxy

被引：12

作者：

Ruda, H ^{[1
]}

Shik, A ^{[1
]}

机构：

[1] Univ Toronto, Energenius Ctr Adv Nanotechnol, Toronto, ON M5S 3E3, Canada

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.63.085203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electronic properties of GaAs grown by low-temperature molecular beam epitaxy are analyzed using a model that assumes a semiconducting matrix with embedded semimetallic As dusters. The static and high-frequency conductivity, Hall effect, lifetime of photoexcited carriers, current-voltage characteristic, and the screening phenomena art: all considered. Model results are compared with existing experimental data and a proposal is given for new experiments that could determine currently unknown properties of the material.

引用

页数：7

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