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Silicon carbide: Synthesis and processing

被引：170
作者：
Wesch, W
机构：
[1] Friedrich-Schiller-Univ. Jena, Inst. für Festkörperphysik, D-07743 Jena
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 116卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(96)00065-1
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Silicon carbide with its outstanding physical properties is a material of choice for special optoelectronic and electronic devices working under extreme conditions. Synthesis as well as processing are complicated compared to other materials. The present paper summarizes some aspects of crystal growth and processing and discusses arising problems.
引用
收藏
页码：305 / 321
页数：17
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