Asymmetry in negative differential resistance driven by electron-electron interactions in two-site molecular devices

被引:19
作者
Han, JE [1 ]
Crespi, VH [1 ]
机构
[1] Penn State Univ, Dept Phys, Davey Lab 104, University Pk, PA 16802 USA
关键词
D O I
10.1063/1.1413499
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate that Coulomb interactions within the Hartree-Fock approximation can induce a strong asymmetry in the negative differential resistance of a two-site resonant molecular device. This sharp cutoff at high voltage is generic and independent of the detailed single-particle electronic structure of the system. The intersite coupling between distinct molecular subunits controls a transition from staircase to resonant current-voltage characteristics. These studies clarify the relationship between weak screening and strong nonlinearity. (C) 2001 American Institute of Physics.
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页码:2829 / 2831
页数:3
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