Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

被引：15

作者：

Liu Xue-Chao ^{[1
]}

Chen Zhi-Zhan ^{[1
]}

Shi Er-Wei ^{[1
]}

Liao Da-Qian ^{[2
]}

Zhou Ke-Jin ^{[3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[3] Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland

来源：

CHINESE PHYSICS B | 2011年 / 20卷 / 03期

基金：

中国国家自然科学基金;

关键词：

diluted magnetic semiconductors; (Ga; Co)-codoped ZnO; anomalous Hall effect; magnetroresisance; PULSED-LASER DEPOSITION; THIN-FILMS; FERROMAGNETISM; EXCHANGE;

D O I：

10.1088/1674-1056/20/3/037501

中图分类号：

O4 [物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co2+ and Ga3+ ions substitute for Zn2+ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic (Ga, Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.

引用

页数：6

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