Characteristics of tungsten carbide films prepared by plasma-assisted ALD using bis(tert-butylimido)bis-(dimethylamido)tungsten

被引:26
作者
Kim, DH [1 ]
Kim, YJ
Song, YS
Lee, BT
Kim, JH
Suh, S
Gordon, R
机构
[1] Chonnam Natl Univ, Fac Appl Chem Engn, Kwangju 500757, South Korea
[2] Chonnam Natl Univ, Res Inst Catalysis, Kwangju 500757, South Korea
[3] Chonnam Natl Univ, Photon & Elect Thin Film Lab, Dept Mat Sci & Engn, Kwangju 500757, South Korea
[4] Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA
关键词
D O I
10.1149/1.1610000
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Tungsten carbide (WCx) thin films were prepared by plasma-assisted atomic layer deposition (ALD) using bis(tert-butylimido) bis(dimethylamido)tungsten at 250degreesC. The effects of plasma pulse time, radio frequency power, and the N-2/H-2 ratio on the film properties, such as resistivity, surface roughness, step coverage, and stability in air, were examined. The film growth rate (thickness/cycle) was in the range 0.04-0.07 nm/cycle and the resistivity of the films varied from 295 to 22,000 muOmega cm, depending on the plasma conditions. The films were smooth and the conformality of the films deposited in 0.15 mum holes with an aspect ratio of 15:1 was 100%. (C) 2003 The Electrochemical Society.
引用
收藏
页码:C740 / C744
页数:5
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