Atomic layer deposition of titanium nitride thin films using tert-butylamine and allylamine as reductive nitrogen sources

Titanium nitride films were deposited by the atomic layer deposition within a temperature range of 400 to 500 degreesC from titanium tetrachloride and titanium tetraiodide using tert-butylamine or allylamine as a reductive nitrogen source with and without ammonia. The films were characterized with time-of-flight elastic recoil detection analysis. X-ray diffraction. and standard four-point probe methods. The films deposited from tert-butylamine exhibited low impurity contents and resistivity, but it lower temperatures the addition of NH3 was necessary in order to achieve a reasonable deposition rate, When allylamine was used as the nitrogen source, the addition of NH3 was not so essential and good quality films were deposited also without NH3. However, more carbon and hydrogen impurities were incorporated. resulting most likely from a decomposition of allylamine. (C) 2001 The Electrochemical Society. [DOI: 10.1149/1.1420925] All rights reserved.