Structural and mechanical properties of polycrystalline silicon germanium for micromachining applications

In this paper, we propose polycrystalline silicon germanium (poly SiGe) as a material suitable for MEMS applications. Films are prepared by chemical vapor deposition (CVD) at atmospheric pressure (AP) or reduced pressure (RP), The structure of the films is investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM) for different deposition and annealing conditions. The stress in the as-grown and annealed layers is measured, and the correlation between stress and structural properties is discussed. It is demonstrated that by adjusting the deposition conditions, the stress of the as-grown material can be varied from -145 to +60 MPa. Examples of poly Sice micromachined devices, prepared at 650 degrees C, are presented. It is shown that by using as-grown poly SiGe, it is possible to realize surface-micromachined suspended membranes having 0.6-mu m-wide and 50-mu m-long supports. The effect of the average stress and stress gradient on the mechanical stability of surface-micromachined structures is illustrated. Finally, the strain in poly SiGe is measured, and it is found to vary, according to the deposition conditions from -6.88 x 10(-4) to 3.6 x 10(-4). These values are compared to those measured for APCVD poly Si. [358].