DESIGN PROPERTIES OF POLYCRYSTALLINE SILICON

被引：44

作者：

KAMINS, TI

机构：

[1] Hewlett-Packard, Palo Alto, CA 94303-0867

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 23卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(90)87039-L

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polycrystalline silicon is used in a variety of sensor applications, in which stress and other mechanical effects can dominate the device behavior. The. © 1990.

引用

收藏

页码：817 / 824

页数：8

相关论文

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