TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THE POLYCRYSTALLINE SILICON-SIO2 INTERFACE

被引：19

作者：

BRAVMAN, JC

SINCLAIR, R

机构：

来源：

THIN SOLID FILMS | 1983年 / 104卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(83)90556-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：153 / 161

页数：9

相关论文

共 13 条

[1] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[2] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
SAH, CT
LEISTIKO, O
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &
[3] SILICON OXIDATION STUDIES - MORPHOLOGICAL ASPECTS OF THE OXIDATION OF POLYCRYSTALLINE SILICON
IRENE, EA
TIERNEY, E
DONG, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : 705 - 713
[4] RESISTIVITY OF LPCVD POLYCRYSTALLINE-SILICON FILMS
KAMINS, TI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (05) : 833 - 837
[5] STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS
KAMINS, TI
MANDURAH, MM
SARASWAT, KC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) : 927 - 932
[6] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON
MANDURAH, MM
SARASWAT, KC
HELMS, CR
KAMINS, TI
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5755 - 5763
[7] PHOSPHORUS DOPING OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS
MANDURAH, MM
SARASWAT, KC
KAMINS, TI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 1019 - 1023
[8] POLYSILICON SIO2 INTERFACE MICROTEXTURE AND DIELECTRIC-BREAKDOWN
MARCUS, RB
SHENG, TT
LIN, P
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1282 - 1289
[9] ROSLER RS, 1977, SOLID STATE TECHNOL, V20, P63
[10] ADVANCES IN TRANSMISSION ELECTRON-MICROSCOPE TECHNIQUES APPLIED TO DEVICE FAILURE ANALYSIS
SHENG, TT
MARCUS, RB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : 737 - 743