Electrochemical nanostructuring of n-Si(111) single-crystal faces

被引:61
作者
Pötzschke, RT
Staikov, G
Lorenz, WJ
Wiesbeck, W
机构
[1] Univ Karlsruhe, Inst Phys Chem & Elektrochem, D-76128 Karlsruhe, Germany
[2] Univ Karlsruhe, Inst Microwave Tech & Elect, D-76128 Karlsruhe, Germany
关键词
D O I
10.1149/1.1391577
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The local formation and dissolution of low-dimensional phases and small clusters on foreign substrates plays an important role in modem nanotechnology. This paper deals with the current state of nanostructuring of semiconductor surfaces by localized electrochemical metal deposition using in situ scanning tunneling microscopy as a nano-tool. New experimental results of delocalized and localized electrochemical deposition and dissolution of Pb on n-type Si(111) single-crystal surfaces are presented. The influence of surface inhomogeneities on the local metal deposition process is considered. (C) 1999 The Electrochemical Society. S0013-4651(98)05-054-X. All rights reserved.
引用
收藏
页码:141 / 149
页数:9
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