Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy

被引：398

作者：

Heo, YW

Norton, DP

Pearton, SJ

机构：

[1] Univ Florida, Dept Mat Sci Engn, Gainesville, FL 32611 USA

[2] Kyungpook Natl Univ, Dept Inorgan Mat Engn, Taegu 702701, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2064308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements were employed to study correlations between deep-level/near-band-edge emission and carrier density. With these results, we suggest that the green emission is related to donor-deep acceptor (Zn vacancy V-Zn(-)) and the yellow to donor- deep acceptor (oxygen vacancy, O-i(-)). (c) 2005 American Institute of Physics.

引用

收藏

页数：6

相关论文

共 22 条

[1] Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE [J].

Bagnall, DM ;

Chen, YF ;

Shen, MY ;

Zhu, Z ;

Goto, T ;

Yao, T .

JOURNAL OF CRYSTAL GROWTH, 1998, 184 :605-609

[2] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].

Chen, YF ;

Bagnall, DM ;

Koh, HJ ;

Park, KT ;

Hiraga, K ;

Zhu, ZQ ;

Yao, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918

[3] Luminescence and nonradiative deactivation of excited states involving oxygen defect centers in polycrystalline ZnO [J].

Egelhaaf, HJ ;

Oelkrug, D .

JOURNAL OF CRYSTAL GROWTH, 1996, 161 (1-4) :190-194

[4] INITIAL STEPS OF INTERFACE FORMATION - SURFACE-STATES AND THERMODYNAMICS [J].

GOPEL, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1229-1235

[5] ZnO thin films prepared by remote plasma-enhanced CVD method [J].

Haga, K ;

Kamidaira, M ;

Kashiwaba, Y ;

Sekiguchi, T ;

Watanabe, H .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :77-80

[6] Transport properties of phosphorus-doped ZnO thin films [J].

Heo, YW ;

Park, SJ ;

Ip, K ;

Pearton, SJ ;

Norton, DP .

APPLIED PHYSICS LETTERS, 2003, 83 (06) :1128-1130

[7] ELECTRON SPIN RESONANCE STUDIES OF DONORS AND ACCEPTORS IN ZNO [J].

KASAI, PH .

PHYSICAL REVIEW, 1963, 130 (03) :989-&

[8] Green luminescent center in undoped zinc oxide films deposited on silicon substrates [J].

Lin, BX ;

Fu, ZX ;

Jia, YB .

APPLIED PHYSICS LETTERS, 2001, 79 (07) :943-945

[9] POINT-DEFECTS AND LUMINESCENCE-CENTERS IN ZINC-OXIDE AND ZINC-OXIDE DOPED WITH MANGANESE [J].

LIU, M ;

KITAI, AH ;

MASCHER, P .

JOURNAL OF LUMINESCENCE, 1992, 54 (01) :35-42

[10] Recent advances in ZnO materials and devices [J].

Look, DC .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3) :383-387