Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBE

被引:224
作者
Bagnall, DM
Chen, YF
Shen, MY
Zhu, Z
Goto, T
Yao, T
机构
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 980, Japan
[2] Tohoku Univ, Dept Phys, Sendai, Miyagi 980, Japan
关键词
ZnO; laser; UV; stimulated emission; exciton; II-VI; photoluminescence;
D O I
10.1016/S0022-0248(98)80127-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Spontaneous, stimulated and laser emission spectra of ZnO epitaxial layers, grown by plasma-assisted molecular beam epitaxy, are presented. Samples are found to exhibit high-intensity near band-edge emissions at room temperature, this is attributed to a dramatic reduction in the intensity of the deep-level emission which dominates ZnO produced by other techniques. Stimulated emission at room temperature is found to be due to exciton-exciton scattering at intermediate excitation intensities while at higher excitation intensities electron-hole plasma emission dominates. An example of longitudinal cavity modes is provided, clearly showing lasing at room temperature. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:605 / 609
页数:5
相关论文
共 12 条
[1]   Optically pumped lasing of ZnO at room temperature [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Koyama, S ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232
[2]   LUMINESCENCE OF HETEROEPITAXIAL ZINC-OXIDE [J].
BETHKE, S ;
PAN, H ;
WESSELS, BW .
APPLIED PHYSICS LETTERS, 1988, 52 (02) :138-140
[3]  
CHEN Y, IN PRESS J CRYSTAL G
[4]   LUMINESCENCE OF ZNO UNDER HIGH ONE-QUANTUM AND 2-QUANTUM EXCITATION [J].
KLINGSHIRN, C .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 71 (02) :547-556
[5]   LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].
MORKOC, H ;
STRITE, S ;
GAO, GB ;
LIN, ME ;
SVERDLOV, B ;
BURNS, M .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398
[6]  
Nakamura S., 1996, P INT S BLUE LAS LIG, P119
[7]   ULTRAVIOLET ZNO LASER PUMPED BY AN ELECTRON BEAM - (77 DEGREES K - E) [J].
NICOLL, FH .
APPLIED PHYSICS LETTERS, 1966, 9 (01) :13-&
[8]  
NURMIKKO AV, 1996, P INT S BLUE LAS LIG, P3
[9]   TEMPERATURE-DEPENDENCE OF SEMICONDUCTOR BAND-GAPS [J].
ODONNELL, KP ;
CHEN, X .
APPLIED PHYSICS LETTERS, 1991, 58 (25) :2924-2926
[10]  
REYNOLDS DC, 1965, PHYS REV, V140, P1726