Dependency of oxygen partial pressure on the characteristics of ZnO films grown by radio frequency magnetron sputtering

被引：27

作者：

Ahn, C. H. ^{[1
]}

Kim, Y. Y. ^{[1
]}

Kang, S. W. ^{[1
]}

Kong, B. H. ^{[1
]}

Mohanta, S. K. ^{[1
]}

Cho, H. K. ^{[1
]}

Kim, J. H. ^{[2
]}

Lee, H. S. ^{[2
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea

[2] Kyungpook Natl Univ, Dept Mat Sci & Met, Taegu 702701, South Korea

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2008年 / 19卷 / 8-9期

关键词：

D O I：

10.1007/s10854-007-9401-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of oxygen and argon gas contents on the structural and optical properties of epitaxially grown ZnO thin films on sapphire substrates by radio frequency magnetron sputtering were investigated. The growth rate of ZnO thin film decreases with increase in oxygen gas contents in the gas mixture. The high-resolution x-ray diffraction (10 (1) over bar2) rocking curve and plane-view transmission electron microscopy investigations reveal the presence of a reduced dislocation density in the ZnO thin films with decrease in oxygen/argon flow ratio. However, large density of defects were observed in the boundaries and inside of the micro-hillocks formed on the surface of ZnO thin film grown with pure argon. The increase in oxygen gas ratio resulted in the improvement of optical properties with suppression and red-shift of the deep level emission.

引用

页码：744 / 748

页数：5

共 19 条

[1]

BUNSHAH RF, 1994, HDB DEPOSITION TECHN, pCH5

[2] Temperature-dependent shifts of three emission bands for ZnO nanoneedle arrays [J].

Cao, BQ ;

Cai, WP ;

Zeng, HB .

APPLIED PHYSICS LETTERS, 2006, 88 (16)

[3] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].

Chen, YF ;

Bagnall, DM ;

Koh, HJ ;

Park, KT ;

Hiraga, K ;

Zhu, ZQ ;

Yao, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918

[4] Revealing all types of threading dislocations in GaN with improved contrast in a single plan view image [J].

Datta, R ;

Kappers, MJ ;

Barnard, JS ;

Humphreys, CJ .

APPLIED PHYSICS LETTERS, 2004, 85 (16) :3411-3413

[5] Green, yellow, and orange defect emission from ZnO nanostructures: Influence of excitation wavelength [J].

Djurisic, AB ;

Leung, YH ;

Tam, KH ;

Ding, L ;

Ge, WK ;

Chen, HY ;

Gwo, S .

APPLIED PHYSICS LETTERS, 2006, 88 (10)

[6] Plan-view image contrast of dislocations in GaN [J].

Follstaedt, DM ;

Missert, NA ;

Koleske, DD ;

Mitchell, CC ;

Cross, KC .

APPLIED PHYSICS LETTERS, 2003, 83 (23) :4797-4799

[7] Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (01(1)over-bar2) sapphire by metalorganic chemical vapor deposition [J].

Gorla, CR ;

Emanetoglu, NW ;

Liang, S ;

Mayo, WE ;

Lu, Y ;

Wraback, M ;

Shen, H .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) :2595-2602

[8]

Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495

[9]

Hirsch, 1965, ELECT MICROSCOPY THI

[10] Ultraviolet emission and microstructural evolution in pulsed-laser-deposited ZnO films [J].

Im, S ;

Jin, BJ ;

Yi, S .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4558-4561

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