Silicon nanowires fabricated by means of an underetching technique

被引：11

作者：

Ciucci, S

D'Angelo, F

Diligenti, A

Pellegrini, B

Pennelli, G

Piotto, M

机构：

[1] CNR, Sez Pisa, IEIIT, I-56122 Pisa, Italy

[2] Univ Pisa, Dipartimento Ingn Informaz, I-56122 Pisa, Italy

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 78-79卷

关键词：

nanowires; e-beam lithography; silicon micromachining;

D O I：

10.1016/j.mee.2004.12.044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon wires with nanometric dimensions have been fabricated on SIMOX wafers by means of e-beam lithography and wet chemical etchings, exploiting the underetching properties of the KOH etchant. The cross section of the resistors has a trapezoidal shape; a minimum top width of 40 nm has been obtained. The whole process required only two writing steps. I-V characteristics were measured at room temperature as a function of the backgate voltage. (c) 2005 Elsevier B.V. All rights reserved.

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页码：338 / 342

页数：5

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