Combinatorial synthesis and evaluation of epitaxial ferroelectric device libraries

被引：71

作者：

Takeuchi, I

Chang, H

Gao, C

Schultz, PG

Xiang, XD ^{[1
]}

Sharma, RP

Downes, MJ

Venkatesan, T

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 07期

关键词：

D O I：

10.1063/1.122030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Combinatorial libraries of parallel-plate capacitors, consisting of Pt and La0.5Sr0.5CoO3 electrodes and a doped BaxSr1-xTiO3 dielectric layer, have been fabricated and analyzed to systematically study the effects of dopants on device performance. Epitaxial heterostructure libraries with sharp interfaces were generated from amorphous layers on LaAlO3 substrates. Two hundred and forty different host/dopant combinations were synthesized on a 1/2 in. by 1/2 in, substrate, with 23 capacitors for each combination. Addition of 1.5 mol % W was found to increase the figure of merit (epsilon/I-leak) 220-fold and reduce the high-frequency (MHz and GHz) loss tangent by fourfold. (C) 1998 American Institute of Physics.

引用

收藏

页码：894 / 896

页数：3

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