Deuterium in re-deposited silicon-doped carbon layers and its removal by heating in air

The composition of co-deposited hydrocarbon-silicon layers (a-C:Si:D) with varying Si concentrations and their removal by heating in air were investigated using MeV ion beam techniques. The amount of trapped D per re-deposited target atom depends weakly on the Si concentration. For pure C and Si, the D concentrations are about 0.45 and 0.5 D atoms per re-deposited target atom at room temperature, respectively. A maximum of about 0.7 D/(Si+C) was found at Si/C approximate to 1. For increasing deposition temperature the D concentration does not decrease significantly until about 600 K. At about 1000 K the D concentration for pure C layers is still about 30% of the concentration at room temperature. The removal rates of D and C by heating in air increase strongly at temperatures around 550 K for a-C:D layers. With increasing Si content, these temperatures rise to above 650 K for layers with Si concentrations higher than 0.2 Si/(Si+C). The C removal rate is always lower than the D removal rate. Si is not removed by this method. For comparison, the composition of co-deposited stainless steel layers and Ti-C mixtures were investigated. (C) 2001 Elsevier Science B.V. All rights reserved.