Spectroscopic and imaging performance of DEPFET pixel sensors

被引：19

作者：

Ulrici, J

Adler, S

Buchholz, P

Fischer, P

Klein, P

Löcker, M

Lutz, G

Neeser, W

Strüder, L

Trimpl, M

Wermes, N

机构：

[1] Univ Bonn, Inst Phys, D-53115 Bonn, Germany

[2] Univ Dortmund, Inst Phys, D-44221 Dortmund, Germany

[3] Max Planck Inst Phys & Astrophys, D-80805 Munich, Germany

[4] Max Planck Inst Extraterr Phys, D-85740 Garching, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 465卷 / 01期

关键词：

DEPFET matrix operation; low noise sensor; tritium detection;

D O I：

10.1016/S0168-9002(01)00401-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

DEPFET pixel sensors consist of a p-channel JFET directly integrated into a high-ohmic n-silicon substrate. They offer a very low-noise performance at room temperature and are therefore of interest for applications in biomedicine, X-ray astronomy and particle physics. Measurements on single pixel devices demonstrating the low-noise potential of DEPFET sensors are shown. The DEPFET pixel bioscope system is based on a 64 x 64 matrix of DEPFET pixels. Measurements of the homogeneity of the charge collection efficiency and of the spatial resolution of the system as well as on the capability of DEPFET sensors to detect tritium with a good efficiency are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：247 / 252

页数：6

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