Using antiferromagnetic/ferromagnetic bilayers as detection layers in magnetic tunnel junctions

被引：16

作者：

Malinowski, G ^{[1
]}

Hehn, M ^{[1
]}

Sajieddine, M ^{[1
]}

Montaigne, F ^{[1
]}

Jouguelet, E ^{[1
]}

Canet, F ^{[1
]}

Alnot, M ^{[1
]}

Lacour, D ^{[1
]}

Schuhl, A ^{[1
]}

机构：

[1] CNRS, UMR 7556, Phys Mat Lab, F-54506 Vandoeuvre Les Nancy, France

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 21期

关键词：

D O I：

10.1063/1.1630171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that the association of an antiferromagnetic material with a ferromagnetic material in an exchange-coupled bilayer, often used in spintronic devices as a magnetic reference or pinned system, can be used as a detection layer in magnetoresistive sensors. The magnetic response is shown to be reversible and linear in an adjustable field window. The sensitivity is studied as a function of temperature. (C) 2003 American Institute of Physics.

引用

页码：4372 / 4374

页数：3

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