Band structure and band offsets in Zn1-xCdxSe/ZnSe quantum wells

被引：5

作者：

Livingstone, M

Galbraith, I

机构：

[1] Department of Physics, Heriot-Watt University

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00812-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The sensitivity of interband and intersubband transition energies to the valence-band offset in Zn(1-x)CdxSe/ZnSe quantum wells is investigated. Interconduction-band transition energies between the first two conduction subband levels is shown to give the optimum sensitivity. By using the valence-band offset, Q(v), as an adjustable parameter we are able to fit calculations to experiment and determine a Q(v) value of 0.31. To calculate the band structure in the quantum well we use an 8 x 8 k . p method which takes into account valence-subband-mixing, nonparabolicity and strain effects.

引用

收藏

页码：542 / 545

页数：4

相关论文

共 10 条

[1]

BAHDER TB, 1990, PHYS REV B, V41, P11922

[2]

DUGGAN G, 1987, HETEROJUNCTION BAND, P207

[3] NEW K.P THEORY FOR GAAS/GA1-XALXAS-TYPE QUANTUM-WELLS [J].

EPPENGA, R ;

SCHUURMANS, MFH ;

COLAK, S .

PHYSICAL REVIEW B, 1987, 36 (03) :1554-1564

[4] DEVELOPMENT AND CHARACTERIZATION OF II-VI BLUE-GREEN DIODE-LASERS [J].

HAUKSSON, IS ;

WANG, SY ;

SIMPSON, J ;

TAGHIZADEH, MR ;

PRIOR, KA ;

CAVENETT, BC .

PHYSICA B, 1993, 191 (1-2) :124-129

[5] DETERMINING ENERGY-BAND OFFSETS IN QUANTUM-WELLS USING ONLY SPECTROSCOPIC DATA [J].

KOTELES, ES .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8480-8484

[6] BAND OFFSETS AND EXCITON BINDING-ENERGIES IN ZN1-XCDXSE-ZNSE QUANTUM-WELLS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY [J].

LIACI, F ;

BIGENWALD, P ;

BRIOT, O ;

GIL, B ;

BRIOT, N ;

CLOITRE, T ;

AULOMBARD, RL .

PHYSICAL REVIEW B, 1995, 51 (07) :4699-4702

[7] EXCITONIC AND RAMAN PROPERTIES OF ZNSE/ZN1-XCDXSE STRAINED-LAYER QUANTUM-WELLS [J].

LOZYKOWSKI, HJ ;

SHASTRI, VK .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (05) :3235-3242

[8] SIMPLE ANALYTICAL METHOD FOR CALCULATING EXCITON BINDING-ENERGIES IN SEMICONDUCTOR QUANTUM-WELLS [J].

MATHIEU, H ;

LEFEBVRE, P ;

CHRISTOL, P .

PHYSICAL REVIEW B, 1992, 46 (07) :4092-4101

[9] LARGE VALENCE-BAND OFFSET IN STRAINED-LAYER INXGA1-XAS-GAAS QUANTUM-WELLS [J].

MENENDEZ, J ;

PINCZUK, A ;

WERDER, DJ ;

SPUTZ, SK ;

MILLER, RC ;

SIVCO, DL ;

CHO, AY .

PHYSICAL REVIEW B, 1987, 36 (15) :8165-8168

[10] GENERAL-APPROACH TO THE ENVELOPE-FUNCTION APPROXIMATION BASED ON A QUADRATURE METHOD [J].

WINKLER, R ;

ROSSLER, U .

PHYSICAL REVIEW B, 1993, 48 (12) :8918-8927