DEVELOPMENT AND CHARACTERIZATION OF II-VI BLUE-GREEN DIODE-LASERS

被引：3

作者：

HAUKSSON, IS ^{[1
]}

WANG, SY ^{[1
]}

SIMPSON, J ^{[1
]}

TAGHIZADEH, MR ^{[1
]}

PRIOR, KA ^{[1
]}

CAVENETT, BC ^{[1
]}

机构：

[1] ACAD SINICA,CHANGCHUN INST PHYS,CHANGCHUN 130021,PEOPLES R CHINA

来源：

PHYSICA B | 1993年 / 191卷 / 1-2期

关键词：

D O I：

10.1016/0921-4526(93)90184-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, we report the growth and characterization of Ii-VI devices grown by molecular beam epitaxy (MBE). The n-type doped ZnSe epilayers were obtained using iodine from an electrochemical cell and nitrogen from a RF plasma source was used for p-type doping. Capacitance-voltage (C-V) electrochemical profiling of layers and devices has been used to ensure uniform n-type and p-type doping. The nitrogen doped epilayers show a compensation process which leads to the suggestion of a new deep donor which is a complex, such as the (V(Se)-Zn-N(Se)) single donor which involves native Se vacancies. The fabrication of pn laser diodes and ZnSe/Zn0.82Cd0.18Se quantum well (QW) laser diodes is reported. The pn junctions show blue laser emission between 448-473 nm under pulsed current conditions at 4.2 K and the QW laser diode shows an excellent mode structure and emits at 474.8 nm at 77 K in pulsed mode operation.

引用

页码：124 / 129

页数：6

共 24 条

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