Acceptor states in the photoluminescence spectra of n-InN -: art. no. 195207

被引:135
作者
Klochikhin, AA
Davydov, VY
Emtsev, VV
Sakharov, AV
Kapitonov, VA
Andreev, BA
Lu, H
Schaff, WJ
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Petersburg Nucl Phys Inst, St Petersburg 188350, Russia
[3] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
[4] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
来源
PHYSICAL REVIEW B | 2005年 / 71卷 / 19期
关键词
D O I
10.1103/PhysRevB.71.195207
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.
引用
收藏
页数:16
相关论文
共 45 条
[1]   Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels [J].
Arnaudov, B ;
Paskova, T ;
Paskov, PP ;
Magnusson, B ;
Valcheva, E ;
Monemar, B ;
Lu, H ;
Schaff, WJ ;
Amano, H ;
Akasaki, I .
PHYSICAL REVIEW B, 2004, 69 (11)
[2]   Energy gap and optical properties of InxGal1-xN [J].
Bechstedt, F ;
Furthmüller, J ;
Ferhat, M ;
Teles, LK ;
Scolfaro, LMR ;
Leite, JR ;
Davydov, VY ;
Ambacher, O ;
Goldhahn, R .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 195 (03) :628-633
[3]   Indium nitride (InN): A review on growth, characterization, and properties [J].
Bhuiyan, AG ;
Hashimoto, A ;
Yamamoto, A .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :2779-2808
[4]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[5]   Theoretical study of the band-gap anomaly of InN [J].
Carrier, P ;
Wei, SH .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (03)
[6]   Ultrafast carrier dynamics in InN epilayers [J].
Chen, F ;
Cartwright, AN ;
Lu, H ;
Schaff, WJ .
JOURNAL OF CRYSTAL GROWTH, 2004, 269 (01) :10-14
[7]   Temperature-dependent optical properties of wurtzite InN [J].
Chen, F ;
Cartwright, AN ;
Lu, H ;
Schaff, WJ .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4) :308-312
[8]   Time-resolved spectroscopy of recombination and relaxation dynamics in InN [J].
Chen, F ;
Cartwright, AN ;
Lu, H ;
Schaff, WJ .
APPLIED PHYSICS LETTERS, 2003, 83 (24) :4984-4986
[9]   Experimental and theoretical studies of phonons in hexagonal InN [J].
Davydov, VY ;
Emtsev, VV ;
Goncharuk, IN ;
Smirnov, AN ;
Petrikov, VD ;
Mamutin, VV ;
Vekshin, VA ;
Ivanov, SV ;
Smirnov, MB ;
Inushima, T .
APPLIED PHYSICS LETTERS, 1999, 75 (21) :3297-3299
[10]   Electronic and vibrational states in InN and InxGa1-xNsolid solutions [J].
Davydov, VY ;
Klochikhin, AA .
SEMICONDUCTORS, 2004, 38 (08) :861-898