Temperature-dependent optical properties of wurtzite InN

被引：27

作者：

Chen, F

Cartwright, AN

Lu, H

Schaff, WJ

机构：

[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

[2] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 20卷 / 3-4期

关键词：

optical properties; time-resolved spectroscopy;

D O I：

10.1016/j.physe.2003.08.024

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Optical properties and carrier recombination dynamics of a series of InN epilayers, with varying free electron concentrations, grown by molecular beam epitaxy were studied by steady-state photoluminescence (PL) and time-resolved differential transmission spectroscopy. At room temperature strong PL around 0.7 eV was observed. Temperature-dependent PL measurements show a redshift of the peak energy and a linear increase of the emission linewidth with temperature. Furthermore, our results demonstrate that room temperature carrier lifetimes are inversely proportional to the free electron concentrations for theses samples. Carrier lifetime as long as 1.3 ns was observed in the best quality sample, indicating a highly improved crystalline quality. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：308 / 312

页数：5

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