Metalorganic vapor-phase epitaxy of GaP1-x-yAsyNx quaternary alloys on GaP

被引：11

作者：

Biwa, G

Yaguchi, H

Onabe, K

Shiraki, Y

机构：

[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 113, Japan

[2] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 153, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

GaPAsN; GaPN; metalorganic vapor-phase epitaxy (MOVPE); nitride alloy; metastable alloy; lattice match;

D O I：

10.1016/S0022-0248(98)00336-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on a successful growth of GaP1-x-yAsyNx quaternary alloys on GaP by metalorganic vapor-phase epitaxy (MOVPE). The arsenic solid composition increases with increasing AsH3 supply during the MOVPE growth, while the nitrogen composition is unchanged. The alloys with compositions (x similar to 2.3%, 0 < y < 19%) are obtained, and the control of the lattice constant in GaP1-x-yAsyNx quaternary alloys is demonstrated. From the dependence of photoluminescence (PL) intensities on lattice mismatch to GaP substrates, we found that lattice-matching to substrates is necessary to obtain GaP1-x-yAsyNx alloys with high quality and intense PL. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：485 / 489

页数：5

共 6 条

[1] LUMINESCENCE QUENCHING AND THE FORMATION OF THE GAP1-XNX ALLOY IN GAP WITH INCREASING NITROGEN-CONTENT [J].