COMPOSITIONAL LATCHING IN GAAS1-XPX/GAAS METALORGANIC VAPOR-PHASE EPITAXY

被引：12

作者：

MIURA, Y

ONABE, K

XIONG, Z

NITTA, Y

FUKATSU, S

SHIRAKI, Y

ITO, R

机构：

[1] UNIV TOKYO,DEPT APPL PHYS,BUNKYO KU,TOKYO 113,JAPAN

[2] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 4B期

关键词：

GAASP; MOVPE; STRAINED LAYER; COMPOSITIONAL LATCHING; LATTICE-RELAXATION RATIO; INCORPORATION PROBABILITY;

D O I：

10.1143/JJAP.30.L664

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MOVPE growth studies of GaAs(1-x)P(x) (x = 0.05-0.40) on GaAs substrates, combined with X-ray diffraction analysis and secondary-ion mass spectroscopy, have demonstrated a "compositional latching" effect in thin layer growth, where the incorporation of P from vapor to solid is suppressed due to lattice strain on the growing surface. A tentative growth model based on strain-dependent incorporation probabilities for P and As has been proposed. The grown surface feature is strongly dependent on the degree of relaxation of the lattice strain.

引用

页码：L664 / L667

页数：4

共 4 条

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[2]

LUDOWISE MJ, 1981, J ELECTRON MATER, V11, P59

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[4] ORGANOMETALLIC EPITAXIAL-GROWTH OF GAAS1-XPX [J].

SAMUELSON, L ;

OMLING, P ;

TITZE, H ;

GRIMMEISS, HG .

JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :323-338

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