GROWTH AND CHARACTERIZATION OF STRAINED LAYERS OF GAASXP1-X

被引：31

作者：

LEYS, MR ^{[1
]}

TITZE, H ^{[1
]}

SAMUELSON, L ^{[1
]}

PETRUZZELLO, J ^{[1
]}

机构：

[1] PHILIPS LABS,BRIARCLIFF MANOR,NY 10510

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

Crystals--Epitaxial Growth - Microscopic Examination--Transmission Electron Microscopy - Semiconducting Films--Strain;

D O I：

10.1016/0022-0248(88)90574-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper discusses the growth and characterization of thin layers of GaAsxP1-x in between GaP. The samples were grown by MOVPE at atmospheric pressure using trimethylgallium, arsine and phosphine. The incorporation of arsenic is treated with the thermodynamic model, using one adjustable parameter. This parameter is a function of the temperature, the growth rate and the adsorption site size so we propose the adsorption/desorption processes on the surface determine the incorporation efficiency of the group V species. Investigations by transmission electron microscopy reveal the crystallographic (im)perfection that is obtained. By growth without interruption, compositional changes are achieved on the level of one or two monolayers. The coherence of the interfaces and the tetragonal deformation of the lattice are made visible by high resolution TEM.

引用

页码：504 / 511

页数：8

共 18 条

[1] ORGANOMETALLIC VPE GROWTH OF INAS1-XSBX ON INAS [J].