Magnetic properties of GaMnAs from an effective Heisenberg Hamiltonian -: art. no. 115206

被引:47
作者
Brey, L [1 ]
Gómez-Santos, G
机构
[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
[2] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
[3] Univ Autonoma Madrid, Inst Nicolas Cabrera, E-28049 Madrid, Spain
关键词
D O I
10.1103/PhysRevB.68.115206
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We introduce a Heisenberg Hamiltonian for describing the magnetic properties of GaMnAs. Electronic degrees of freedom are integrated, leading to a pairwise interaction between Mn spins. Monte Carlo simulations in large systems are then possible, and reliable values for the Curie temperatures of diluted magnetic semiconductors can be obtained. Comparison of mean field and Monte Carlo Curie temperatures shows that fluctuation effects are important for systems with a large hole density and/or increasing locality in the carriers-Mn coupling. We have also compared the results obtained by using a realistic k.p model with those of a simplified parabolic two band model. In the two-band model, the existence of a spherical Fermi surface produces the expected sign oscillations in the coupling between Mn spins, magnifying the effect of fluctuations and leading to the eventual disappearance of ferromagnetism. In the more realistic k.p model, warping of the Fermi surface diminishes the sign oscillations in the effective coupling and, therefore, the effect of fluctuations on the critical temperature is severely reduced. Finally, by studying the collective magnetic excitations of this model at zero temperature, we analyze the stability of the fully polarized ferromagnetic ground state.
引用
收藏
页数:11
相关论文
共 26 条
[21]   Disorder-induced noncollinear ferromagnetism in models for (III,Mn)V semiconductors [J].
Schliemann, J .
PHYSICAL REVIEW B, 2003, 67 (04)
[22]   Noncollinear ferromagnetism in (III,Mn)V semiconductors [J].
Schliemann, J ;
MacDonald, AH .
PHYSICAL REVIEW LETTERS, 2002, 88 (13) :4-137201
[23]   Monte Carlo study of ferromagnetism in (III,Mn)V semiconductors -: art. no. 165201 [J].
Schliemann, J ;
König, J ;
MacDonald, AH .
PHYSICAL REVIEW B, 2001, 64 (16)
[24]   Correlated defects, metal-insulator transition, and magnetic order in ferromagnetic semiconductors -: art. no. 137201 [J].
Timm, C ;
Schäfer, F ;
von Oppen, F .
PHYSICAL REVIEW LETTERS, 2002, 89 (13) :137201-137201
[25]  
Yu Y., 1996, FUNDAMENTALS SEMICON
[26]   Ga1-xMnxAs: A frustrated ferromagnet [J].
Zaránd, Gergely ;
Jankó, Boldizsár .
Physical Review Letters, 2002, 89 (04) :1-047201