Application of microscale plasma to material processing

被引:83
作者
Ito, T [1 ]
Izaki, T [1 ]
Terashima, K [1 ]
机构
[1] Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan
关键词
electrode fabricated by lithography; microscale plasma; plasma chip; carbon film;
D O I
10.1016/S0040-6090(00)01670-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We generated microscale plasmas using novel electrodes fabricated by lithography and confirmed that Paschen's law can be extended to gaps between electrodes as narrow as 5 mum. To develop the application of a microscale plasma to material processing, we performed plasma chemical vapor deposition (P-CVD) of carbon films with this microscale plasma using a CH4-H-2 gas system, for the first time. We deposited carbon films using various gas ratios of H-2/CH4. Deposits were characterized by scanning electron microscopy (SEM), electron probe microscopy analysis (EPMA), Auger electron spectroscopy (AES), and Raman spectroscopy. Using Raman spectroscopy, it was found that the bonding nature of these carbon films changed from sp(2) to sp(3) with increasing H-2/CH4 ratio. Lastly, we proposed an integrated plasma processing apparatus on a substrate, namely a plasma chip. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:300 / 304
页数:5
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